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Affiliation

Laboratory of Semiconductor Devices Physics, University of Bechar, P.O. Box 417, Bechar 08000, Algeria

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1 Papers

Improving a Compressively Strained Ga x In 1-X N y As 1-Y /GaAs Multiple Quantum Well Lasers for Emitting around 1300 Nm

Topics: Photonic and Optoelectronic Materials and Devices; Semiconductor Lasers and Leds; Optical Materials and Devices

Authors: F. Hadjaj , M. Belhadj , A. Nasri , I. Benyahia and K. Laoufi

Affiliation: Laboratory of Semiconductor Devices Physics, University of Bechar, P.O. Box 417, Bechar 08000, Algeria

Digital Object Identifier: 10.5220/0012324900003651

Proceedings of PHOTOPTICS 2024, ISBN: 978-989-758-686-6

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The objective of this work is to study the effect of Nitrogen incorporation on the structural and optical properties of GaxIn1-xNyAs1-y semiconductor alloy in order to obtain quantum well GaxIn1-xNyAs1-y/GaAs structures emitting at wavelengths around 1.3 μm. We also investigated their effect on the band gap energy, the electron effective mass, the optical gain, and the optical confinement. The incorporation of Nitrogen in the GaxIn1-xAs alloy gave very particular and attractive properties, the most important being the reduction of the band-gap energy and a significant increase in effective mass, which results in an increase in the emission wavelength. The anticrossing band model describes these properties. It is also found that the optical gain and confinement factor were found to be strongly increased when the Nitrogen content was reduced. In order to achieve a wavelength of 1.3 μm and maintain a high-quality structure, we found that decreasing the Gallium composition (x) and increasing the Nitrogen composition (y) simultaneously gave accurate results.