ELECTRICAL RELIABILITY OF Cu/Sn MICRO-BUMP IN WAFER LEVEL PACKAGING FOR BioMEMS DEVICES

Myeong-Hyeok Jeong, Jae-Won Kim, Byung-Hyun Kwak, Young-Bae Park, Byoung-Joon Kim, Young-Chang Joo

Abstract

The electrical reliability of Cu/Sn micro-bump in wafer level packaging for advanced BioMEMS devices applications were systematically investigated during current stressing condition. After bump bonding, Cu3Sn and Cu6Sn5 intermetallic phases were observed, and Cu3Sn formed and grew at Cu pillar/Cu6Sn5 interface with increasing annealing and current stressing time. The kinetics of intermetallic compound growth changed when all Sn in Cu/Sn micro-bump was exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. Under current stressing condition, intermetallic compound growth was significantly enhanced by current stressing where the growth rate follows a linear relationship with stressing time.

References

  1. Chiang, K. N., Lee, C. C., Lee, C. C., and Chen, K. M., 2006, Applied Physics Letters, vol. 88, pp. 072102_1- 3.
  2. Rao, V. S., Tay, A. A. O., Kripseph, V., Lim, C. T., and Yoon, S. W., 2004, in Proceedings of the 6th Electronics Packing Technology Conference, Singapore, Dec., pp. 444-449.
  3. Son, H. Y., Jung, G. J., Park, B. J., and Paik, K. W., 2008, Journal of Electronic Materials, vol. 37, pp. 1832- 1842.
  4. Tu, K. N., Mayer, J. W., and Feldman, L. C., 1992, New York: Macmillan, pp. 324.
  5. Lee, T. K., Zhang, S., Wong, C. C., Tan, A. C., and Hadikusuma, D., 2006, Thin Solid Films, vol. 504, pp. 441-445.
  6. Chao, B., Chae, S. H., Zhang, X., Lu, K. H., Im, J., and Ho, P. S., 2007, Acta Metallurgica et Materialia., vol. 55, pp. 2805-2814.
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Paper Citation


in Harvard Style

Jeong M., Kim J., Kwak B., Park Y., Kim B. and Joo Y. (2011). ELECTRICAL RELIABILITY OF Cu/Sn MICRO-BUMP IN WAFER LEVEL PACKAGING FOR BioMEMS DEVICES . In Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2011) ISBN 978-989-8425-37-9, pages 311-314. DOI: 10.5220/0003122603110314


in Bibtex Style

@conference{biodevices11,
author={Myeong-Hyeok Jeong and Jae-Won Kim and Byung-Hyun Kwak and Young-Bae Park and Byoung-Joon Kim and Young-Chang Joo},
title={ELECTRICAL RELIABILITY OF Cu/Sn MICRO-BUMP IN WAFER LEVEL PACKAGING FOR BioMEMS DEVICES},
booktitle={Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2011)},
year={2011},
pages={311-314},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0003122603110314},
isbn={978-989-8425-37-9},
}


in EndNote Style

TY - CONF
JO - Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2011)
TI - ELECTRICAL RELIABILITY OF Cu/Sn MICRO-BUMP IN WAFER LEVEL PACKAGING FOR BioMEMS DEVICES
SN - 978-989-8425-37-9
AU - Jeong M.
AU - Kim J.
AU - Kwak B.
AU - Park Y.
AU - Kim B.
AU - Joo Y.
PY - 2011
SP - 311
EP - 314
DO - 10.5220/0003122603110314