SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION

Kow-Ming Chang, Chu-Feng Chen, Chiung-Hui Lai, Cheng-Ting Hsieh, Chin-Ning Wu, Yu-Bin Wang, Chung-Hsien Liu, Kuo Chin Chang

Abstract

The increase of surface to volume ratio results in the enhancement of the sensitivity of the nanowires. Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire improves the sensitivity of the nanowire biosensor as a result of carrier mobility enhancement in strain-Si. Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation has obtained a significant enhancement in hole mobility, further improving the sensitivity of SGOI nanowire. However, the sensitivity of SGOI nanowire was degraded for exceeding a Ge fraction of 20% (i.e., high Ge fraction), resulting from the unstable surface state. In this work, a top surface passivation SiO2 layer was deposited on Si0.8Ge0.2 nanowire and the sensitivity was about 1.3 times greater than nanowire sample without the top passivation layer.

References

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Paper Citation


in Harvard Style

Chang K., Chen C., Lai C., Hsieh C., Wu C., Wang Y., Liu C. and Chang K. (2012). SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION . In Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2012) ISBN 978-989-8425-91-1, pages 384-387. DOI: 10.5220/0003875403840387


in Bibtex Style

@conference{biodevices12,
author={Kow-Ming Chang and Chu-Feng Chen and Chiung-Hui Lai and Cheng-Ting Hsieh and Chin-Ning Wu and Yu-Bin Wang and Chung-Hsien Liu and Kuo Chin Chang},
title={SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION},
booktitle={Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2012)},
year={2012},
pages={384-387},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0003875403840387},
isbn={978-989-8425-91-1},
}


in EndNote Style

TY - CONF
JO - Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2012)
TI - SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION
SN - 978-989-8425-91-1
AU - Chang K.
AU - Chen C.
AU - Lai C.
AU - Hsieh C.
AU - Wu C.
AU - Wang Y.
AU - Liu C.
AU - Chang K.
PY - 2012
SP - 384
EP - 387
DO - 10.5220/0003875403840387