InAs/GaSb Superlattice Photodiodes Operating in the Midwave Infrared Range

P. Christol, R. Taalat, C. Cervera, H. Aït-Kaci, M. Delmas, J. B. Rodriguez, E. Giard, I. Ribet-Mohamed

Abstract

This communication reports on InAs/GaSb superlattice (SL) pin photodiodes. The SL structures, fabricated by molecular beam epitaxy (MBE), are made of symmetrical and asymmetrical period designs adapted for the Midwave Infrared (MWIR) domain, with cut-off wavelength near 5µm at 77K. The structures are studied in terms of dark current-voltage measurements. Comparison of results revealed the predominance of the asymmetric SL design with dark current densities J = 4x10-8A/cm2 at 77K for Vbias = -50mV and R0A product equal to 1.5x106.cm2 at 77K, one order of magnitude higher than the symmetric SL structures. Such result demonstrates the strong influence of the period on the electrical properties of SL MWIR photodiodes.

References

  1. Abdollahi Pour, S., Huang, E. K., Chen, G., Haddadi, A., Nguyen, B.-M, Razeghi, M., 2011. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices, Appl. Phys. Lett. 98, 143501.
  2. Cervera, C., Rodriguez, J. B., Chaghi, R., Aït-Kaci, H., Christol, P., 2009. Characterization of Midwave Infrared InAs/GaSb Superlattice Photodiode, J. Appl. Phys 106, 024501.
  3. Chaghi, R., Cervera, C., Aït-Kaci, H., Rodriguez J. B., Christol, P., 2009. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes, Semicond. Sci. Technol. 24, 065010.
  4. Gunapala, S. D., Ting, D. Z., Hill, C. J., Nguyen, J., Soibel, A., Rafol, S.B., Keo, S. A., Mumolo, J. M., Lee, M. C., Liu, J. K., Yang, B., Liao, A., 2010. Demonstration of 1Kx1K long-wave and mid-wave superlattice infrared focal plane arrays, Proc. SPIE 7808, 780802.
  5. Haugan, H. J., Grazulis, L., Brown, G. J., Mahalingam, K., Tomich, D. H., 2004. Exploring optimum growth for high quality InAs/GaSb type-II superlattices, J. Cryst. Growth 261, 471
  6. Hood, A., Delaunay, P-Y., Hoffman, D., Nguyen, B-M. Wei, Y., Razeghi, M., 2007. Near bulk-limited R0A of long-wavelength infrared type-II InAs/GaSb superlattice photodiodes with polyimide surface passivation, Appl. Phys. Lett. 90, 233513.
  7. Hill, C. J., Li, J. V., Mumolo, J. M., Gunapala, S. D., 2007. MBE grown type-II MWIR and LWIR superlattice photodiodes, Infrared Phys. Technol. 50, 187.
  8. Kaspi, R., Steinshnider, J., Weimer, M., Moeller, C., Ongstad, A., 2001. As-soak control of the InAs-onGaSb interface, J. Cryst. Growth 261, 544
  9. Little, J. W., Svensson, S. P., Beck, W. A., Goldberg, A.C., Kennerly, S. W., Hongsmatip, T., Winn, M., Uppal P., 2007. Thin active region, type II superlattice photodiode arrays: single-pixel and focal plane array characterization, J. Appl. Phys. 101, 044514-6
  10. Plis, E., Kutty, M. N., Krishna, S., 2011. Review of passivation techniques for InAs/GaSb strained layer superlattice detectors, Laser & Photonics Reviews 7, 1.
  11. Rehm, R., Walther, M., Schmitz, J., Fleißner, J., Fuchs, F., Ziegler, J., Cabanski, W., 2006. InAs/GaSb superlattice focal plane arrays for high-resolution thermal imaging, Opto-Electron. Rev. 14, 19.
  12. Rodriguez, J. B., Christol, P., Chevrier, F., Joullié, A., 2005. Optical characterization of symmetric InAs/GaSb superlattices for detection in the 3-5 mm spectral region, Physica E 28, 128.
  13. Rodriguez, J. B., Cervera, C., Christol, P., 2010. A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement, Appl. Phys. Lett. 97, 251113.
  14. Rogalski, A., Antoszewski, J., Faraone, L., 2009. “Thirdgeneration infrared photodetector arrays,” J. Appl. Phys. 105, 091101.
  15. Satpati, B., Rodriguez, J. B., Trampert, A., Tournié, E., Joullié, A., Christol, P., 2007. Interface analysis of InAs/GaSb superlattice grown by MBE, J. Cryst. Growth 301, 889-892
  16. Walther, M., Weimann, G., 2006. Infrared imaging with InAs/GaSb type-II superlattices, Phys. Stat. sol (a) 203, 3545.
  17. Wei, Y., Hood, A., Yau, H., Gin, A., Razeghi, M., Tidrow, M. Z., Nathan, V., 2005. Uncooled operation of typeII InAs/GaSb superlattice photodiodes in the midwavelength infrared range, Appl. Phys. Lett. 86, 233106.
  18. Yang, M. J., Bennet, B. R., 1994. InAs/GaSb infrared photovoltaic detector at 77K, Electron. Lett. 30, 1710- 1711.
Download


Paper Citation


in Harvard Style

Christol P., Taalat R., Cervera C., Aït-Kaci H., Delmas M., Rodriguez J., Giard E. and Ribet-Mohamed I. (2013). InAs/GaSb Superlattice Photodiodes Operating in the Midwave Infrared Range . In Proceedings of the International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-8565-44-0, pages 91-95. DOI: 10.5220/0004222600910095


in Bibtex Style

@conference{photoptics13,
author={P. Christol and R. Taalat and C. Cervera and H. Aït-Kaci and M. Delmas and J. B. Rodriguez and E. Giard and I. Ribet-Mohamed},
title={InAs/GaSb Superlattice Photodiodes Operating in the Midwave Infrared Range},
booktitle={Proceedings of the International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2013},
pages={91-95},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0004222600910095},
isbn={978-989-8565-44-0},
}


in EndNote Style

TY - CONF
JO - Proceedings of the International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - InAs/GaSb Superlattice Photodiodes Operating in the Midwave Infrared Range
SN - 978-989-8565-44-0
AU - Christol P.
AU - Taalat R.
AU - Cervera C.
AU - Aït-Kaci H.
AU - Delmas M.
AU - Rodriguez J.
AU - Giard E.
AU - Ribet-Mohamed I.
PY - 2013
SP - 91
EP - 95
DO - 10.5220/0004222600910095