Molecular Beam Epitaxy of (ErxSc1-x)2O3 on Si(111) for Active Integrated Optical Devices

H. Omi, T. Tawara, T. Hozumi, R. Kaji, S. Adachi, H. Gotoh, T. Sogawa

Abstract

We grew (ErxSc1-x)2O3 films on Si(111) as a function of x using the molecular beam epitaxy method. The films were characterized by synchrotron grazing incidence and normal X-ray diffraction, cross-sectional transmission electron microscopy, and photoluminescence measurements in spectrum and time domains. We succeeded in obtaining (ErxSc1-x)2O3 films on Si(111) that are strained and exhibit 1.5-m light emission from Er3+ ions at 4 K and room temperature. We found that the epitaxial Er-doped Sc2O3 films are better candidates as a light emitting material than epitaxial layers of Er2O3 on Si(111).

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Paper Citation


in Harvard Style

Omi H., Tawara T., Hozumi T., Kaji R., Adachi S., Gotoh H. and Sogawa T. (2014). Molecular Beam Epitaxy of (ErxSc1-x)2O3 on Si(111) for Active Integrated Optical Devices . In Proceedings of 2nd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-008-6, pages 175-179. DOI: 10.5220/0004762001750179


in Bibtex Style

@conference{photoptics14,
author={H. Omi and T. Tawara and T. Hozumi and R. Kaji and S. Adachi and H. Gotoh and T. Sogawa},
title={Molecular Beam Epitaxy of (ErxSc1-x)2O3 on Si(111) for Active Integrated Optical Devices},
booktitle={Proceedings of 2nd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2014},
pages={175-179},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0004762001750179},
isbn={978-989-758-008-6},
}


in EndNote Style

TY - CONF
JO - Proceedings of 2nd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Molecular Beam Epitaxy of (ErxSc1-x)2O3 on Si(111) for Active Integrated Optical Devices
SN - 978-989-758-008-6
AU - Omi H.
AU - Tawara T.
AU - Hozumi T.
AU - Kaji R.
AU - Adachi S.
AU - Gotoh H.
AU - Sogawa T.
PY - 2014
SP - 175
EP - 179
DO - 10.5220/0004762001750179