Kinetics of Photosensitivity in Ge-Sb-Se Thin Films

M. Olivier, R. Boidin, P. Hawlová, P. Němec, V. Nazabal

Abstract

Chalcogenide (GeSe2)100-x(Sb2Se3)x thin films obtained using pulsed laser deposition are exposed to light with energy close to band gap energy, in order to investigate kinetics of photoinduced phenomena. It appears that a reversible transient photodarkening is observed. The metastable part of photodarkening, which seems to be slower, is followed by photobleaching. A modelling of the evolution of transmission during illumination suggests that each process has an independent effective time constant, and that magnitude of photoinduced phenomena depends on various parameters, such as laser’s fluency, absorption coefficient and composition.

References

  1. Antoine, K., Jain, H., Vlcek, M., Senanayake, S. D., Drabold, D. A., 2009. Chemical origin of polarizationdependent photoinduced changes in an As36Se64 glass film via in situ synchrotron x-ray photoelectron spectroscopy. Phys. Rev. B 79, 054204. doi:10.1103/PhysRevB.79.054204.
  2. Barik, A. R., Adarsh, K. V., Naik, R., Ganesan, R., Yang, G., Zhao, D., Jain, H., Shimakawa, K., 2011. Role of rigidity and temperature in the kinetics of photodarkening in GexAs(45-x)Se55 thin films. Opt. Express 19, 13158-13163. doi:10.1364/OE.19.013158.
  3. Barik, A. R., Naik, R., Adarsh, K. V., 2013. Unusual observation of fast photodarkening and slow photobleaching in a-GeSe2 thin film. J. Non-Cryst. Solids, ISNOG 2012 Proceedings of the 18th International Symposium on Non-Oxide and New Optical Glasses Rennes, France, July 1-5, 2012 377, 179-181. doi:10.1016/j.jnoncrysol.2013.01.038.
  4. Calvez, L., Yang, Z., Lucas, P., 2010. Composition dependence and reversibility of photoinduced refractive index changes in chalcogenide glass. J. Phys. Appl. Phys. 43, 445401. doi:10.1088/0022- 3727/43/44/445401.
  5. Flaxer, E., Klebanov, M., Abrahamoff, D., Noah, S., Lyubin, V., 2009. Photodarkening of As50Se50 glassy films under µs light pulses. Opt. Mater. 31, 688-690. doi:10.1016/j.optmat.2008.07.013.
  6. Ganjoo, A., Chen, G., Jain, H., 2006. Photoinduced changes in the local structure of a-GeSe2 by in situ EXAFS. Phys. Chem. Glas. - Eur. J. Glass Sci. Technol. Part B 47, 177-181.
  7. Ganjoo, A., Shimakawa, K., Kamiya, H., Davis, E. A., Singh, J., 2000. Percolative growth of photodarkening in amorphous As2S3 films. Phys. Rev. B 62, R14601- R14604. doi:10.1103/PhysRevB.62.R14601.
  8. Ganjoo, A., Shimakawa, K., Kitano, K., Davis, E. A., 2002. Transient photodarkening in amorphous chalcogenides. J. Non-Cryst. Solids, 19th International Conference on Amorphous and Microcrystalline Semiconductors 299-302, Part 2, 917-923. doi:10.1016/S0022-3093(01)00991-7.
  9. Khan, P., Barik, A. R., Vinod, E. M., Sangunni, K. S., Jain, H., Adarsh, K.V., 2012. Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films. Opt. Express 20, 12416- 12421. doi:10.1364/OE.20.012416.
  10. Khan, P., Jain, H., Adarsh, K. V., 2014. Role of Ge:As ratio in controlling the light-induced response of aGexAs35-xSe65 thin films. Sci. Rep. 4. doi:10.1038/srep04029.
  11. Kolobov, A. V., 2006. Photo-Induced Metastability in Amorphous Semiconductors. John Wiley & Sons.
  12. Kotsalas, I. P., Papadimitriou, D., Raptis, C., Vlcek, M., Frumar, M., 1998. Raman study of photostructural changes in amorphous GexSb0.4-xS0.6. J. Non-Cryst. Solids 226, 85-91. doi:10.1016/S0022- 3093(97)00493-6.
  13. Kumar, R. R., Barik, A. R., Vinod, E. M., Bapna, M., Sangunni, K.S., Adarsh, K.V., 2013. Crossover from photodarkening to photobleaching in a-GexSe100-x thin films. Opt. Lett. 38, 1682-1684. doi:10.1364/OL.38.001682.
  14. Nang, T. T., Okuda, M., Matsushita, T., 1979. Photoinduced absorption change in some Se-based glass alloy systems. Phys. Rev. B 19, 947-955. doi:10.1103/PhysRevB.19.947.
  15. Nemec, P., Frumar, M., 2009. Irreversible photoinduced changes in As48S52 amorphous thin films prepared by pulsed laser deposition. Thin Solid Films 517, 3635- 3638. doi:10.1016/j.tsf.2008.11.110.
  16. Olivier, M., Tchahame, J. C., Nemec, P., Chauvet, M., Besse, V., Cassagne, C., Boudebs, G., Renversez, G., Boidin, R., Baudet, E., Nazabal, V., 2014. Structure, nonlinear properties, and photosensitivity of (GeSe2)100-x(Sb2Se3)x glasses. Opt. Mater. Express 4, 525. doi:10.1364/OME.4.000525.
  17. Petkov, K., Ewen, P.J.S., 1999. Photoinduced changes in the linear and non-linear optical properties of chalcogenide glasses. J. Non-Cryst. Solids 249, 150- 159. doi:10.1016/S0022-3093(99)00330-0.
  18. Spence, C. A., Elliott, S. R., 1989. Light-induced oxidation and band-edge shifts in thermally evaporated films of germanium chalcogenide glasses. Phys. Rev. B 39, 5452-5463. doi:10.1103/PhysRevB.39.5452.
  19. Tichý, L., Tichá, H., Nagels, P., Sleeckx, E., 1995. A review of the specific role of oxygen in irreversible photo- and thermally induced changes of the optical properties of thin film amorphous chalcogenides. Opt. Mater. 4, 771-779. doi:10.1016/0925-3467(95)00022- 4.
  20. Todorov, R., Paneva, A., Petkov, K., 2010. Optical characterization of thin chalcogenide films by multiple-angle-of-incidence ellipsometry. Thin Solid Films 518, 3280-3288. doi:10.1016/j.tsf.2009.09.002.
  21. Yan, Q., Jain, H., Ren, J., Zhao, D., Chen, G., 2011. Effect of Photo-Oxidation on Photobleaching of GeSe2 and Ge2Se3 Films. J. Phys. Chem. C 115, 21390-21395. doi:10.1021/jp2035967.
  22. Yan, Q., Jain, H., Yang, G., Ren, J., Chen, G., 2012. Millisecond kinetics of photo-darkening/bleaching in xGe45Se55-(1-x)As45Se55 chalcogenide amorphous films. J. Appl. Phys. 112, 053105. doi:10.1063/1.4752027.
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Paper Citation


in Harvard Style

Olivier M., Boidin R., Hawlová P., Němec P. and Nazabal V. (2015). Kinetics of Photosensitivity in Ge-Sb-Se Thin Films . In Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-092-5, pages 67-72. DOI: 10.5220/0005332000670072


in Bibtex Style

@conference{photoptics15,
author={M. Olivier and R. Boidin and P. Hawlová and P. Němec and V. Nazabal},
title={Kinetics of Photosensitivity in Ge-Sb-Se Thin Films},
booktitle={Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2015},
pages={67-72},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0005332000670072},
isbn={978-989-758-092-5},
}


in EndNote Style

TY - CONF
JO - Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Kinetics of Photosensitivity in Ge-Sb-Se Thin Films
SN - 978-989-758-092-5
AU - Olivier M.
AU - Boidin R.
AU - Hawlová P.
AU - Němec P.
AU - Nazabal V.
PY - 2015
SP - 67
EP - 72
DO - 10.5220/0005332000670072