Kinetics of Photosensitivity in Ge-Sb-Se Thin Films

M. Olivier, R. Boidin, P. Hawlová, P. Němec, V. Nazabal


Chalcogenide (GeSe2)100-x(Sb2Se3)x thin films obtained using pulsed laser deposition are exposed to light with energy close to band gap energy, in order to investigate kinetics of photoinduced phenomena. It appears that a reversible transient photodarkening is observed. The metastable part of photodarkening, which seems to be slower, is followed by photobleaching. A modelling of the evolution of transmission during illumination suggests that each process has an independent effective time constant, and that magnitude of photoinduced phenomena depends on various parameters, such as laser’s fluency, absorption coefficient and composition.


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Paper Citation

in Harvard Style

Olivier M., Boidin R., Hawlová P., Němec P. and Nazabal V. (2015). Kinetics of Photosensitivity in Ge-Sb-Se Thin Films . In Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-092-5, pages 67-72. DOI: 10.5220/0005332000670072

in Bibtex Style

author={M. Olivier and R. Boidin and P. Hawlová and P. Němec and V. Nazabal},
title={Kinetics of Photosensitivity in Ge-Sb-Se Thin Films},
booktitle={Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},

in EndNote Style

JO - Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Kinetics of Photosensitivity in Ge-Sb-Se Thin Films
SN - 978-989-758-092-5
AU - Olivier M.
AU - Boidin R.
AU - Hawlová P.
AU - Němec P.
AU - Nazabal V.
PY - 2015
SP - 67
EP - 72
DO - 10.5220/0005332000670072