Fabrication of Surface Relief Optical Elements in Ternary Chalcogenide Thin Films by Direct Laser Writing

I. Voynarovych, R. Poehlmann, S. Schroeter, M. Vlcek

Abstract

Direct laser writing with a continuous-wave high intensity and over-band gap laser is applied to realize surface relief optical elements in ternary As-S-Se and Ge-As-S thin chalcogenide films. The topology of created structures in dependence on the experimental conditions is investigated. Analyses indicate that the formation mechanisms of the surface patterns are thermally induced processes generated by the local heating and involve thermoplastic deformation, mass flow induced by the surface tension gradient and evaporation. Diffractive gratings with a period of 2.56 m, depths of up to 100 nm, and different periodic surface structures were patterned at the surface of 1 m thick films. The spectral dependencies of diffraction efficiency were measured and discussed.

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Paper Citation


in Harvard Style

Voynarovych I., Poehlmann R., Schroeter S. and Vlcek M. (2015). Fabrication of Surface Relief Optical Elements in Ternary Chalcogenide Thin Films by Direct Laser Writing . In Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 2: PHOTOPTICS, ISBN 978-989-758-093-2, pages 134-139. DOI: 10.5220/0005404001340139


in Bibtex Style

@conference{photoptics15,
author={I. Voynarovych and R. Poehlmann and S. Schroeter and M. Vlcek},
title={Fabrication of Surface Relief Optical Elements in Ternary Chalcogenide Thin Films by Direct Laser Writing},
booktitle={Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 2: PHOTOPTICS,},
year={2015},
pages={134-139},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0005404001340139},
isbn={978-989-758-093-2},
}


in EndNote Style

TY - CONF
JO - Proceedings of the 3rd International Conference on Photonics, Optics and Laser Technology - Volume 2: PHOTOPTICS,
TI - Fabrication of Surface Relief Optical Elements in Ternary Chalcogenide Thin Films by Direct Laser Writing
SN - 978-989-758-093-2
AU - Voynarovych I.
AU - Poehlmann R.
AU - Schroeter S.
AU - Vlcek M.
PY - 2015
SP - 134
EP - 139
DO - 10.5220/0005404001340139