Optimization of Transfer Times in Pinned Photodiodes

Lutz Girgenrath, Martin Hofmann, Ralf Kühnhold, Holger Vogt


An implantation scheme which enhances the readout speed of a silicon pinned photodiode (PPD) with large pixel length is presented. The basic PPD structure was developed for Time-of-Flight (TOF) distance measurement applications by the Fraunhofer IMS in Duisburg, Germany, and was fabricated in a standard 0.35 μm CMOS process. The optimized design of this PPD introduces the possibility to improve the electron readout speed by changing the n-well configuration with a second well implantation. The local increase in doping concentration creates a designated electron path which utilizes the reset voltage of the readout node. This behaviour is shown by simulation and measurement results are presented.


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Paper Citation

in Harvard Style

Girgenrath L., Hofmann M., Kühnhold R. and Vogt H. (2017). Optimization of Transfer Times in Pinned Photodiodes . In Proceedings of the 5th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-223-3, pages 312-316. DOI: 10.5220/0006239603120316

in Bibtex Style

author={Lutz Girgenrath and Martin Hofmann and Ralf Kühnhold and Holger Vogt},
title={Optimization of Transfer Times in Pinned Photodiodes},
booktitle={Proceedings of the 5th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},

in EndNote Style

JO - Proceedings of the 5th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Optimization of Transfer Times in Pinned Photodiodes
SN - 978-989-758-223-3
AU - Girgenrath L.
AU - Hofmann M.
AU - Kühnhold R.
AU - Vogt H.
PY - 2017
SP - 312
EP - 316
DO - 10.5220/0006239603120316