Research on NiCoB Diffusion Barrier Film Prepared by Electroless Deposition for ULSI-Cu Metallization

Z. H. Yang, X. H. Chen, W. H. Ma, Y. C. Wang, K. Chen, J. X. Han

Abstract

In this paper, NiCoB/Cu/NiCoB/Si and NiCoB/Si samples were prepared by electroless deposition. XPS, XRD, FPP and AFM were used to characterize the elemental valence and composition, phases, sheet resistance and surface morphology of the samples. According to the results, it can be found that the electroless deposited NiCoB film was amorphous, and it was composed of CoB compound and elementary Ni. The results of NiCoB films annealed at temperatures ranging from 500°C to 850°C demonstrated that the electroless deposited NiCoB film can block Cu diffusion effectively until 850°C.

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Paper Citation


in Harvard Style

Yang Z., Chen X., Ma W., Wang Y., Chen K. and Han J. (2018). Research on NiCoB Diffusion Barrier Film Prepared by Electroless Deposition for ULSI-Cu Metallization.In Proceedings of the International Workshop on Materials, Chemistry and Engineering - Volume 1: IWMCE, ISBN 978-989-758-346-9, pages 425-433. DOI: 10.5220/0007439704250433


in Bibtex Style

@conference{iwmce18,
author={Z. H. Yang and X. H. Chen and W. H. Ma and Y. C. Wang and K. Chen and J. X. Han},
title={Research on NiCoB Diffusion Barrier Film Prepared by Electroless Deposition for ULSI-Cu Metallization},
booktitle={Proceedings of the International Workshop on Materials, Chemistry and Engineering - Volume 1: IWMCE,},
year={2018},
pages={425-433},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0007439704250433},
isbn={978-989-758-346-9},
}


in EndNote Style

TY - CONF

JO - Proceedings of the International Workshop on Materials, Chemistry and Engineering - Volume 1: IWMCE,
TI - Research on NiCoB Diffusion Barrier Film Prepared by Electroless Deposition for ULSI-Cu Metallization
SN - 978-989-758-346-9
AU - Yang Z.
AU - Chen X.
AU - Ma W.
AU - Wang Y.
AU - Chen K.
AU - Han J.
PY - 2018
SP - 425
EP - 433
DO - 10.5220/0007439704250433