Characterization of a Single Layer of Si0.73Ge0.27 and a Quantum-Well Structure of Si0.4Ge0.6/Ge by Quantitative SIMS Depth Profiling Using the Analytical Depth Resolution Function of the MRI Model

Q. R. Deng, H. L. Kang, Y. S. Han, X. H. Zhang, X. W. Mai, Q. Q. Huang, J. Y. Wang

2018

Abstract

The analytical depth resolution function of the Mixing-Roughness-Information (MRI) model is used to fit the measured SIMS depth profiling data of a single layer of Si0.73Ge0.27 and a Si0.4Ge0.6/Ge quantum-well structure on Si substrate. The interface roughness and the individual layer thickness and the depth resolution values are determined accordingly. The obtained layer thickness values in Si0.4Ge0.6/Ge quantum-well structure are consistent with the ones measured by HR-TEM with a maximum relative error less than 1.2%.

Paper Citation

in Harvard Style

Deng Q., Kang H., Han Y., Zhang X., Mai X., Huang Q. and Wang J. (2018). Characterization of a Single Layer of Si0.73Ge0.27 and a Quantum-Well Structure of Si0.4Ge0.6/Ge by Quantitative SIMS Depth Profiling Using the Analytical Depth Resolution Function of the MRI Model.In Proceedings of the International Workshop on Materials, Chemistry and Engineering - Volume 1: IWMCE, ISBN 978-989-758-346-9, pages 486-492. DOI: 10.5220/0007440504860492

in Bibtex Style

@conference{iwmce18,
author={Q. R. Deng and H. L. Kang and Y. S. Han and X. H. Zhang and X. W. Mai and Q. Q. Huang and J. Y. Wang},
title={Characterization of a Single Layer of Si0.73Ge0.27 and a Quantum-Well Structure of Si0.4Ge0.6/Ge by Quantitative SIMS Depth Profiling Using the Analytical Depth Resolution Function of the MRI Model},
booktitle={Proceedings of the International Workshop on Materials, Chemistry and Engineering - Volume 1: IWMCE,},
year={2018},
pages={486-492},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0007440504860492},
isbn={978-989-758-346-9},
}

in EndNote Style

TY - CONF

JO - Proceedings of the International Workshop on Materials, Chemistry and Engineering - Volume 1: IWMCE,
TI - Characterization of a Single Layer of Si0.73Ge0.27 and a Quantum-Well Structure of Si0.4Ge0.6/Ge by Quantitative SIMS Depth Profiling Using the Analytical Depth Resolution Function of the MRI Model
SN - 978-989-758-346-9
AU - Deng Q.
AU - Kang H.
AU - Han Y.
AU - Zhang X.
AU - Mai X.
AU - Huang Q.
AU - Wang J.
PY - 2018
SP - 486
EP - 492
DO - 10.5220/0007440504860492