Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping

Kento Okamoto, Toshifumi Kikuchi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

Abstract

Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.

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Paper Citation


in Harvard Style

Okamoto K., Kikuchi T., Ikeda A., Ikenoue H. and Asano T. (2019). Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping.In Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-364-3, pages 294-298. DOI: 10.5220/0007583002940298


in Bibtex Style

@conference{photoptics19,
author={Kento Okamoto and Toshifumi Kikuchi and Akihiro Ikeda and Hiroshi Ikenoue and Tanemasa Asano},
title={Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping},
booktitle={Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2019},
pages={294-298},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0007583002940298},
isbn={978-989-758-364-3},
}


in EndNote Style

TY - CONF

JO - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping
SN - 978-989-758-364-3
AU - Okamoto K.
AU - Kikuchi T.
AU - Ikeda A.
AU - Ikenoue H.
AU - Asano T.
PY - 2019
SP - 294
EP - 298
DO - 10.5220/0007583002940298