Authors:
Kento Okamoto
1
;
Toshifumi Kikuchi
1
;
Akihiro Ikeda
2
;
Hiroshi Ikenoue
1
and
Tanemasa Asano
1
Affiliations:
1
Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka and Japan
;
2
Department of Computer and Information Sciences, Sojo University, 4-22-1 Ikeda, Nishi-ku, Kumamoto and Japan
Keyword(s):
4H-SiC, Ohmic Contact, Laser Doping, Specific Contact Resistance, Aluminum, p-type, Ti/Al.
Related
Ontology
Subjects/Areas/Topics:
High Intensity Lasers and High Field Phenomena
;
Lasers
;
Photonics, Optics and Laser Technology
;
Plasma Technologies
Abstract:
Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.