Authors:
Jack Jia-Sheng Huang
1
;
H. S. Chang
1
;
Yu-Heng Jan
1
;
H. S. Chen
1
;
C. J. Ni
1
;
E. Chou
1
;
S. K. Lee
1
and
Jin-Wei Shi
2
Affiliations:
1
Source Photonics, United States
;
2
National Central University, Taiwan
Keyword(s):
Avalanche Photodiode, APD Photodetector, InGaAs/InAlAs APD, Top-Illumination APD, 100Gb/s Ethernet, 100G Datacenter, ER4, IEEE802.3.
Related
Ontology
Subjects/Areas/Topics:
Photodetectors, Sensors and Imaging
;
Photonic and Optoelectronic Materials and Devices
;
Photonics
;
Photonics, Optics and Laser Technology
;
Ultrafast Electronics, Photonics and Optoelectronics
Abstract:
One of the key enablers for 100G ER4-Lite optical modules is 25G APD photodetector that can be employed
in 30-40km optical links for inter-datacenter applications. In this paper, we demonstrate that a cost-effective
top-illuminated InGaAs/InAlAs APD photodetector can be manufactured to meet stringent IEEE standard of
100G ER4-Lite. The 25G APD shows high bandwidth, high sensitivity with superb temperature stability of
breakdown voltage. The APD photodetector also possesses excellent durability against harsh optical and
electrical overload in both burst and continuous modes. Robust reliability performance based on aging
conditions of 85-175°C has also been achieved with an activation energy of 1.18eV.