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Authors: Kento Okamoto 1 ; Toshifumi Kikuchi 1 ; Akihiro Ikeda 2 ; Hiroshi Ikenoue 1 and Tanemasa Asano 1

Affiliations: 1 Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, Japan ; 2 Department of Computer and Information Sciences, Sojo University, 4-22-1 Ikeda, Nishi-ku, Kumamoto, Japan

ISBN: 978-989-758-364-3

Keyword(s): 4H-SiC, Ohmic Contact, Laser Doping, Specific Contact Resistance, Aluminum, p-type, Ti/Al.

Abstract: Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.

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Paper citation in several formats:
Okamoto, K.; Kikuchi, T.; Ikeda, A.; Ikenoue, H. and Asano, T. (2019). Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping.In Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-364-3, pages 294-298. DOI: 10.5220/0007583002940298

@conference{photoptics19,
author={Kento Okamoto. and Toshifumi Kikuchi. and Akihiro Ikeda. and Hiroshi Ikenoue. and Tanemasa Asano.},
title={Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping},
booktitle={Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2019},
pages={294-298},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0007583002940298},
isbn={978-989-758-364-3},
}

TY - CONF

JO - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping
SN - 978-989-758-364-3
AU - Okamoto, K.
AU - Kikuchi, T.
AU - Ikeda, A.
AU - Ikenoue, H.
AU - Asano, T.
PY - 2019
SP - 294
EP - 298
DO - 10.5220/0007583002940298

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