Authors:
Jinsoo Yoo
1
;
Youjip Won
1
;
Sooyong Kang
1
;
Jongmoo Choi
2
;
Sungroh Yoon
3
and
Jaehyuk Cha
1
Affiliations:
1
Hanyang University, Korea, Republic of
;
2
Dankook University, Korea, Republic of
;
3
Seoul National University, Korea, Republic of
Keyword(s):
Flash, SSD, Parallelism, Simulation, Modeling.
Related
Ontology
Subjects/Areas/Topics:
Formal Methods
;
Mathematical Simulation
;
Performance Analysis
;
Simulation and Modeling
;
Simulation Tools and Platforms
Abstract:
SSDs support various IO parallel mechanisms such as channel parallelism, way parallelism, and plane parallelism
to increase IO performance. To measure an SSD’s performance in a simulation environment, the
simulator has to support the parallel IO operations of an SSD by modeling its internal IO behaviors. In this paper,
we developed an analytical model to calculate the IO latency of multi-channel and multi-way architected
SSDs. In formulating the IO latency model, we categorized SSDs’ IO types into two operations: single page
read/write operations and multiple page read/write operations. With the IO latency model, we can calculate
the IO performance of a real SSD, Intel X25-M, with a 3.8% offset.