Authors:
N. K. M’Sirdi
;
E. Baghaz
;
K. Frifita
;
A. Naamane
and
M. Boussak
Affiliation:
Aix Marseille Université, CNRS, ENSAM, Université de Toulon, LSIS UMR 7296, LSIS UMR 7296 and HyRES Lab and RMEI, France
Keyword(s):
Electro-thermal Model, Boost DC/DC Converter, Power Source, SiC MOSFET Behavior, Estimation and Control.
Related
Ontology
Subjects/Areas/Topics:
Engineering Applications
;
Informatics in Control, Automation and Robotics
;
Intelligent Control Systems and Optimization
;
Mechatronics Systems
;
Modeling, Analysis and Control of Hybrid Dynamical Systems
;
Robotics and Automation
;
Signal Processing, Sensors, Systems Modeling and Control
Abstract:
An electro-thermal model of a power SiC MOSFET is proposed. The thermal model, is coupled with the physical model through the interaction between the transistor power loss and the junction temperature. For validation of this model, the simulation curves are compared to the manufacturer’s experimental curves. As first application, a boost DC/DC converter is considered. An observer is proposed to estimate the MOSFET voltage VDS, the power and the junction temperature. These estimates are used to control the converter. The proposed model and estimator give sufficiently good temperature and power estimation. The Power source obtained using DC/DC converter is efficient, allowing the power loss reduction and robust.