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Authors: Kow-Ming Chang 1 ; Chu-Feng Chen 2 ; Chiung-Hui Lai 3 ; Cheng-Ting Hsieh 2 ; Chin-Ning Wu 2 ; Yu-Bin Wang 2 ; Chung-Hsien Liu 2 and Kuo Chin Chang 4

Affiliations: 1 National Chiao-Tung University and I-Shou University, Taiwan ; 2 National Chiao-Tung University, Taiwan ; 3 Chung Hua University, Taiwan ; 4 Dept. MD Tse-An Clinic 319, Taiwan

Keyword(s): SiGe-on-insulator, Biosensor, Passivation, Sensitivity.

Related Ontology Subjects/Areas/Topics: Biomedical Engineering ; Biomedical Instruments and Devices ; Biomedical Sensors

Abstract: The increase of surface to volume ratio results in the enhancement of the sensitivity of the nanowires. Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire improves the sensitivity of the nanowire biosensor as a result of carrier mobility enhancement in strain-Si. Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation has obtained a significant enhancement in hole mobility, further improving the sensitivity of SGOI nanowire. However, the sensitivity of SGOI nanowire was degraded for exceeding a Ge fraction of 20% (i.e., high Ge fraction), resulting from the unstable surface state. In this work, a top surface passivation SiO2 layer was deposited on Si0.8Ge0.2 nanowire and the sensitivity was about 1.3 times greater than nanowire sample without the top passivation layer.

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Paper citation in several formats:
Chang, K.; Chen, C.; Lai, C.; Hsieh, C.; Wu, C.; Wang, Y.; Liu, C. and Chang, K. (2012). SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION. In Proceedings of the International Conference on Biomedical Electronics and Devices (BIOSTEC 2012) - BIODEVICES; ISBN 978-989-8425-91-1; ISSN 2184-4305, SciTePress, pages 384-387. DOI: 10.5220/0003875403840387

@conference{biodevices12,
author={Kow{-}Ming Chang. and Chu{-}Feng Chen. and Chiung{-}Hui Lai. and Cheng{-}Ting Hsieh. and Chin{-}Ning Wu. and Yu{-}Bin Wang. and Chung{-}Hsien Liu. and Kuo Chin Chang.},
title={SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION},
booktitle={Proceedings of the International Conference on Biomedical Electronics and Devices (BIOSTEC 2012) - BIODEVICES},
year={2012},
pages={384-387},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0003875403840387},
isbn={978-989-8425-91-1},
issn={2184-4305},
}

TY - CONF

JO - Proceedings of the International Conference on Biomedical Electronics and Devices (BIOSTEC 2012) - BIODEVICES
TI - SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION
SN - 978-989-8425-91-1
IS - 2184-4305
AU - Chang, K.
AU - Chen, C.
AU - Lai, C.
AU - Hsieh, C.
AU - Wu, C.
AU - Wang, Y.
AU - Liu, C.
AU - Chang, K.
PY - 2012
SP - 384
EP - 387
DO - 10.5220/0003875403840387
PB - SciTePress

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