Authors:
Sorcha Bennett
and
Joe Sullivan
Affiliation:
Limerick Institute of Technology, Ireland
Keyword(s):
Non-volatile Memory, Flash Memory, Reliability, Endurance, Retention, Wearout, NOR, NAND, Multi-Level Cell (MLC), Triple-Level Cell (TLC), Machine Learning (ML).
Related
Ontology
Subjects/Areas/Topics:
Artificial Intelligence
;
Computational Intelligence
;
Evolutionary Computing
;
Industrial Applications of AI
;
Knowledge Discovery and Information Retrieval
;
Knowledge-Based Systems
;
Machine Learning
;
Soft Computing
;
Symbolic Systems
Abstract:
Flash memory is non-volatile and, while it is becoming ever more commonplace, it is not yet a complete replacement for hard disk drives. The physical layout of Flash means that it is more susceptible to degradation over time, leading to a limited lifetime of use. This paper will give an introduction to NAND Flash memory, followed by an overview of the relevant research on the reliability of MLC memory, conducted using Machine Learning (ML). The results obtained will then be used to characterise and optimise the reliability of TLC memory.