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Authors: F. Hadjaj ; M. Belhadj ; A. Nasri ; I. Benyahia and K. Laoufi

Affiliation: Laboratory of Semiconductor Devices Physics, University of Bechar, P.O. Box 417, Bechar 08000, Algeria

Keyword(s): Multiple Quantum Well Laser, Nitrogen Incorporation, GaxIn1-xNyAs1-y/GaAs.

Abstract: The objective of this work is to study the effect of Nitrogen incorporation on the structural and optical properties of GaxIn1-xNyAs1-y semiconductor alloy in order to obtain quantum well GaxIn1-xNyAs1-y/GaAs structures emitting at wavelengths around 1.3 μm. We also investigated their effect on the band gap energy, the electron effective mass, the optical gain, and the optical confinement. The incorporation of Nitrogen in the GaxIn1-xAs alloy gave very particular and attractive properties, the most important being the reduction of the band-gap energy and a significant increase in effective mass, which results in an increase in the emission wavelength. The anticrossing band model describes these properties. It is also found that the optical gain and confinement factor were found to be strongly increased when the Nitrogen content was reduced. In order to achieve a wavelength of 1.3 μm and maintain a high-quality structure, we found that decreasing the Gallium composition (x) and increa sing the Nitrogen composition (y) simultaneously gave accurate results. (More)

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Paper citation in several formats:
Hadjaj, F.; Belhadj, M.; Nasri, A.; Benyahia, I. and Laoufi, K. (2024). Improving a Compressively Strained Ga x In 1-X N y As 1-Y /GaAs Multiple Quantum Well Lasers for Emitting around 1300 Nm. In Proceedings of the 12th International Conference on Photonics, Optics and Laser Technology - PHOTOPTICS; ISBN 978-989-758-686-6; ISSN 2184-4364, SciTePress, pages 39-44. DOI: 10.5220/0012324900003651

@conference{photoptics24,
author={F. Hadjaj. and M. Belhadj. and A. Nasri. and I. Benyahia. and K. Laoufi.},
title={Improving a Compressively Strained Ga x In 1-X N y As 1-Y /GaAs Multiple Quantum Well Lasers for Emitting around 1300 Nm},
booktitle={Proceedings of the 12th International Conference on Photonics, Optics and Laser Technology - PHOTOPTICS},
year={2024},
pages={39-44},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0012324900003651},
isbn={978-989-758-686-6},
issn={2184-4364},
}

TY - CONF

JO - Proceedings of the 12th International Conference on Photonics, Optics and Laser Technology - PHOTOPTICS
TI - Improving a Compressively Strained Ga x In 1-X N y As 1-Y /GaAs Multiple Quantum Well Lasers for Emitting around 1300 Nm
SN - 978-989-758-686-6
IS - 2184-4364
AU - Hadjaj, F.
AU - Belhadj, M.
AU - Nasri, A.
AU - Benyahia, I.
AU - Laoufi, K.
PY - 2024
SP - 39
EP - 44
DO - 10.5220/0012324900003651
PB - SciTePress

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