Authors:
M. Bouška
1
;
P. Hawlová
1
;
V. Nazabal
2
;
L. Beneš
3
and
P. Němec
1
Affiliations:
1
University of Pardubice, Czech Republic
;
2
University of Pardubice and Université de Rennes 1, Czech Republic
;
3
v.v.i. and University of Pardubice, Czech Republic
Keyword(s):
Amorphous Chalcogenide, Thin Films, Ge-As-Te, Photostability.
Related
Ontology
Subjects/Areas/Topics:
Mobile Software and Services
;
Optical Materials
;
Optics
;
Photonics, Optics and Laser Technology
;
Photorefractive Effects, Materials, and Devices
;
Telecommunications
;
Wireless Information Networks and Systems
Abstract:
Pulsed laser deposition was used for the fabrication of amorphous thin films from Ge-As-Te system with the
aim to study their intrinsic photostability. Photostability of prepared layers was studied using spectroscopic
ellipsometry within as-deposited as well as relaxed layers. For irradiation, laser sources operating at three
energies (1.17, 0.92 and 0.8 eV) in band gap region of the studied materials were employed. The lowest
values of photorefraction (refractive index changes) accompanied with lowest changes of band gap values
present Ge20As20Te60 thin films, which are therefore considered as the layers with highest photostability,
especially in relaxed state.