Authors:
J-P. Perez
1
;
Q. Durlin
1
;
C. Cervera
2
and
P. Christol
1
Affiliations:
1
Univ. Montpellier, IES, UMR 5214, CNRS, IES and UMR 5214, France
;
2
CEA-LETI, France
Keyword(s):
Infrared Photodetector, Type II Superlattice, Molecular Beam Epitaxy.
Related
Ontology
Subjects/Areas/Topics:
Photodetectors, Sensors and Imaging
;
Photonic and Optoelectronic Materials and Devices
;
Photonics
;
Photonics, Optics and Laser Technology
Abstract:
We studied Ga-free InAs/InAsSb type-II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid-wavelength infrared domain (MWIR, 3-5µm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n-type GaSb substrate and exhibited cut-off wavelength between 5µm and 5.5µm at 150K. Electro-optical and electrical results of the device are reported and compared to the usual InSb MWIR photodiode.