PORTABLE DOSIMETER WITH MOSFET SENSOR FOR RADIOTHERAPY MONITORING
M. A. Carvajal, J. Banqueri, A. J. Palma, A. M. Lallena, M. Vilches, D. Guirado
2011
Abstract
A portable dosimeter based on unbiased MOSFET sensor is presented. Its main characteristics are an extended linearity range and a notable thermal drift reduction using a unique p-channel MOSFET (pMOS) unbiased during the irradiation period, allowing the location of the sensor without wires for patient comfort and easy-to-use. Both features have been obtained with novel procedures of dose reading and signal processing applied to low-cost commercial pMOS. In this work, a full description of the electronics of the dosimetry system and the signal processing techniques are drawn. The system has been tested with photons from 60Co and the complete technical specifications have been obtained. Among them, we can emphasize: i) dose sensitivity of around 25 mV/Gy; ii) linearity range of more than 50 Gy, with intermediate calibration each 15 Gy, for each sensor; iii) thermal drift below 3 mGy/ºC; iv) resolution below 1cGy; and v) total uncertainty of ± 9 mGy in the temperature range from 19 ºC to 36 ºC . We believe that the proposed dosimeter could be a novel and feasible low-cost alternative to previous commercial dosimetry systems for radiotherapy monitoring in clinical applications.
References
- Asensio L J, Carvajal M A , López-Villanueva J A, M. Vilches, A. M. Lallena and A. J. Palma, 2006 Evaluation of a low-cost commercial MOSFET as radiation dosimeter Sensors and Actuators A 125 288- 295,.
- Benson C, Joyce M J, O'Connell B and Silvie J 2000 Neutron Detection at the Extremes of Sensitivity in the Cosmic Environment IEEE Trans Nucl. Sci. 6 2417- 2422.
- Best S, Ralson A and Suchowerska N 2005 Clinical Application of the OneDoseTM Patient Dosimetry System for total body irradiation Phys. Med. Biol. 50 5909-5919.
- Bloemen E, Bois W, P. Visser P, Bruinvis I, Jalink D, Hermans J and Lambin P 2003 Clinical dosimetry with MOSFET dosimeters to determinate the dose along the field junction in a split beam technique Radiother. Oncol. 67 (2003) 351-357.
- Buehler M G, Blaes B R, Soli G A and Tardio G R 1993 On Chip p-MOSFET Dosimetry IEEE Trans. Nucl. Sci. 40 1442-1449.
- 5Li l (5) 0 10 20 40 50 60 Carvajal M A, Vilches M, Guirado D, Lallena A M, Banqueri J and Palma A J, 2010 Readout techniques for linearity and resolution improvements in MOSFET dosimeters Sensors and Actuators A 157 178-184.
- Carvajal M A, Martínez-Olmos A, Morales D P, López-Villanueva J A, Lallena A M and Palma A J, 2010 Thermal Drift Reduction With Multiple Current Polarization For MOSFET Dosimeters send for publication to Phys. Med. Biol.
- Fraden J, 1996 Handbook of modern sensor. Physics, design and application, 2nd Edition (New York: Springer Science+Biseness Media).
- Halvorsen P. H. 2005. Dosimetric evaluation of a new design MOSFET in vivo dosimeter, Med. Phys. 32 110-117.
- Haran A, Jaksic A, Refaeli N, Eliyahu A, David D and Barak J 2004 Temperature Effects and Long Term Fading of Implanted and Unimplanted Gate Oxide RADFETs, IEEE Trans. Nucl. Sci. 5 2917-2921.
- Holmes-Siedle A and Adams L 1986 RADFET: A review of the use of metal-oxide-silicon devices as integrating dosimeters Radiat. Phys. Chem. 28 235-244.
- Hughes R C, Huffman D, Snelling J V, Zipperian J E, Ricco A J and Kelsy A 1988 Miniature Radiation Dosimeter for In-Vivo Radiation Measurements, Int. J. Radiat. Oncol. Biol. Phys. 14 963-967.
- Kwan I S, Rosenfeld A B, Qia Z Y, Wilkinson D, Lerch M L F, Cutajar D L, Safavi-Naeni M, Butson M, Bucci J A, Chin Y and Perevertaylo V L 2008 Skin dosimetry with newMOSFET detectors Radiation Measurements 43 929 - 932.
- Ma T P and Dressendorfer P V 1989 Ionizing Radiation Effects In MOS Devices and Circuits (New York: John Wiley & Sons).
- Rosenfeld A B 2002 MOSFET Dosimetry on Modern Radiation Oncology Modalities, Radiat. Prot. Dosim. 101 393-398.
- Sarrabayrouse G and Siskos S 1998 Radiation Dose Measurement using MOSFETs, IEEE Instrum. Meas. Mag. 1 26-34.
- Soubra M, Cygler J and Mackay G 1994 Evaluation of a dual bias metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter, Med. Phys. 21 (1994) 567-572.
- Sicel Technologies 2005 OneDose Users Manual, Pre-production draft version, rev. P01, (Morrisville: Sicel Technologies Inc.).
- Sze S M 1981 Physics of Semiconductor Devices, 2nd edition. (New York: John Wiley & Sons)
- Thomson & Nielsen 1991 Direct reading dosimeter European Patent Office EP 0471957A2, (02/07/1991).
Paper Citation
in Harvard Style
Carvajal M., Banqueri J., Palma A., Lallena A., Vilches M. and Guirado D. (2011). PORTABLE DOSIMETER WITH MOSFET SENSOR FOR RADIOTHERAPY MONITORING . In Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2011) ISBN 978-989-8425-37-9, pages 23-29. DOI: 10.5220/0003128100230029
in Bibtex Style
@conference{biodevices11,
author={M. A. Carvajal and J. Banqueri and A. J. Palma and A. M. Lallena and M. Vilches and D. Guirado},
title={PORTABLE DOSIMETER WITH MOSFET SENSOR FOR RADIOTHERAPY MONITORING},
booktitle={Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2011)},
year={2011},
pages={23-29},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0003128100230029},
isbn={978-989-8425-37-9},
}
in EndNote Style
TY - CONF
JO - Proceedings of the International Conference on Biomedical Electronics and Devices - Volume 1: BIODEVICES, (BIOSTEC 2011)
TI - PORTABLE DOSIMETER WITH MOSFET SENSOR FOR RADIOTHERAPY MONITORING
SN - 978-989-8425-37-9
AU - Carvajal M.
AU - Banqueri J.
AU - Palma A.
AU - Lallena A.
AU - Vilches M.
AU - Guirado D.
PY - 2011
SP - 23
EP - 29
DO - 10.5220/0003128100230029