New Materials for Photon Counting Avalanche Photodiodes

Josef Blazej

2016

Abstract

The experimental results acquired on avalanche photodiodes based on III-V semiconductor materials and operated as single photon counters with picosecond timing resolution are reported. The semiconductor structures fabricated on the basis of GaAs, GaP and GaAsP have been operated in a Geiger mode and employed in a photon counting experiment at the wavelengths from near ultraviolet to near infrared. The dark count rates, photon counting sensitivity and timing resolution have been measured for the experimental diode samples.

References

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Paper Citation


in Harvard Style

Blazej J. (2016). New Materials for Photon Counting Avalanche Photodiodes . In Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-174-8, pages 236-240. DOI: 10.5220/0005656802360240


in Bibtex Style

@conference{photoptics16,
author={Josef Blazej},
title={New Materials for Photon Counting Avalanche Photodiodes},
booktitle={Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2016},
pages={236-240},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0005656802360240},
isbn={978-989-758-174-8},
}


in EndNote Style

TY - CONF
JO - Proceedings of the 4th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - New Materials for Photon Counting Avalanche Photodiodes
SN - 978-989-758-174-8
AU - Blazej J.
PY - 2016
SP - 236
EP - 240
DO - 10.5220/0005656802360240