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subsurface band bending, drift and diffusion currents
have different signs. At the dye – silicon
heterojunction the change of photopotential character
during illumination in different spectral regions was
discovered (Komolov, et al, 2006). The subsurface
band bending in semiconductors can be controlled by
an external electric field or an additional illumination
(Akimov, 1966), as well as the adsorption of the
electron-acceptor and electron-donor molecules on
the semiconductor surface (Pimenov and Goryaev,
1976).
4 CONCLUSIONS
Observed effective dye sensitization of the internal
photoelectric effect in silicon can be used in such
semiconductor devices for converting the light energy
into electric energy as solar panels or image sensors
in modern electronic photography systems. In the
case of silicon solar batteries increasing the near-
surface free carriers generation may decrease the
thickness of cells. The application of dye sensitization
in CCD matrices will enable the improvement of the
color separation system during the recording of
colored images as in traditional silver halide
photography. Selecting appropriate dyes to provide
an effective increase in sensitivity in the required
spectral range instead of using light filters can
decrease losses of energy and of valuable information
in electronic photography.
ACKNOWLEDGEMENTS
This research was supported by the Ministry of
Education and Science of the Russian Federation
(Project No. 3.5005.2017/BY).
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