New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector

J-P. Perez, Q. Durlin, C. Cervera, P. Christol

2018

Abstract

We studied Ga-free InAs/InAsSb type-II superlattice (T2SL) in terms of period, thickness and antimony composition as a photon absorbing active layer (AL) of a suitable XBn structure for full mid-wavelength infrared domain (MWIR, 3-5µm) detection. The SL photodetector structures were fabricated by molecular beam epitaxy (MBE) on n-type GaSb substrate and exhibited cut-off wavelength between 5µm and 5.5µm at 150K. Electro-optical and electrical results of the device are reported and compared to the usual InSb MWIR photodiode.

Paper Citation

in Harvard Style

Perez J., Durlin Q., Cervera C. and Christol P. (2018). New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector .In Proceedings of the 6th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-286-8, pages 232-237. DOI: 10.5220/0006634002320237

in Bibtex Style

@conference{photoptics18,
author={J-P. Perez and Q. Durlin and C. Cervera and P. Christol},
title={New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector },
booktitle={Proceedings of the 6th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2018},
pages={232-237},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0006634002320237},
isbn={978-989-758-286-8},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 6th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - New Ga-Free InAs/InAsSb Superlattice Infrared Photodetector
SN - 978-989-758-286-8
AU - Perez J.
AU - Durlin Q.
AU - Cervera C.
AU - Christol P.
PY - 2018
SP - 232
EP - 237
DO - 10.5220/0006634002320237