Keywords: thin films, spin coater, ZnO / Al, XRD, SEM, UV-Visible
Abstract: In this work we studied the effect of aluminum doping concentration on the structural properties of zinc
oxide thin films, we deposited samples of ZnO and aluminum doped ZnO with a doping rate of 1, 2, 3, 4
and 5%, on glass substrates by the spin coating technique. The structural characterization of the samples is
done by the XRD and SEM techniques, the XRD spectra show that the layers are polycrystalline with a
hexagonal würtzite structure, and a preferred orientation in the plane (002), and for the doping 5% the
structure is almost monocrystaline (002). SEM images are used to confirm grain sizes and surface
conditions. Optical characterization is done by UV-visible spectroscopy, gives a good visible transmittance
up to 80% and exceeds 90% for 2% doping, and the gap varies with the doping variation with a small gap
for the same doping (2%).
1 INTRODUCTION
In recent years, transparent and conductive
oxides (TCO) such as ZnO, find important
applications in new technologies. Since the
discovery at the beginning of the century of duality:
good electrical conductivity and good optical
transparency in the visible, research in the field of
TCO are really intensified from the 80s. Non-
toxicity and this great existence on earth are the
main advantages of ZnO, these advantages give the
possibility of reducing the manufacturing costs of
ZnO-based composites, in the massive state the ZnO
has several structures, among its structures, the
Würtzite structure is the most stable for ZnO, these
lattice parameters of the latter are: a = 0.3296 nm
and c = 0.5207 nm. It does not have a center of
symmetry. It can be deduced that this structure is an
insertion of two HC networks (the O2- and Zn2 +
network), with the displacement of the oxygen
network by a fraction of 0.38 the size of a unit cell
relative to ZnO is a degenerate semiconductor with
n-type conductivity, this conductivity is due in
particular to excess zinc in interstitial positions, with
a large direct gap (3.436 to 0 K and 3.2 eV at room
temperature). ). Its electrical properties can be
changed by heat treatment, or by appropriate doping,
the conductivity of ZnO can be increased by the
substitution of trivalent atoms for the positions of
the Zn atoms, and to reduce the conductivity the Zn
atoms can be substituted by monovalent atoms.
The methods of elaboration of the thin layers are
classified in two big categories: Physical methods
(Sputtering, Laser ablation, Evaporation under
vacuum), and Chemical methods (Spray pyrolysis,
Sol gel), in this work we prepared our layers by the
Sol-Gel method associated with spin coater.
2 EXPERIMENTAL PART
The ZnO layers are deposited based on a
solution that prepares as follows: zinc acetate
dihydrate [Zn (CH
3
COO) 2. 2H2O] (a concentration
of 0.4M / L) dissolved in a mixture of isopropanol,
ethanol and monoethanolamine, this mixture and
heated stirring with a temperature of 60 ° C for a
period of 2 hours. The dopant source (Aluminum) is
aluminum chloride (AlCl
3
). The deposit is made by