study is carried out for both DLAR and SLAR placed
on OLED. The enhancement in the far field intensity
is achieved with DLAR based OLED is 2.4 x 10
-5
V/m
in greater in comparison with single layer ARC
placed on OLED of about 1.7x10
-5
V/m. Based on
these simulations the reflection losses are reduced at
the glass-air interface of an OLED. Such DLAR
based OLED can be prepared to effectively use in
display and lab-on a chip applications.
ACKNOWLEDGEMENTS
The authors would like to thank Science and
Engineering Research Board, Department of Science
and Technology (DST-SERB) Government of India
for funding this research work.
File No. YSS/2015/000382
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