A New Design Method for Emitter Finger Space of Heterojunction Bipolar Transistors

Chuantao Ma

2019

Abstract

A new design method for emitter finger space of multi-finger HBT was proposed to improve thermal stability of HBT. The 3-D temperature distribution, cross section temperature distribution, cross section temperature gradient distribution of five-finger power HBT with traditional emitter structure and non-uniform emitter finger space structure at the same dissipation power are given. Compared with 3-D temperature distribution and cross section temperature distribution, the difference between traditional emitter structure and non-uniform emitter finger space structure is more distinctive, so the cross-section temperature gradient distribution is more effective for the design technique of non-uniform finger spacing of multiple finger power HBT.

Paper Citation

in Harvard Style

Ma C. (2019). A New Design Method for Emitter Finger Space of Heterojunction Bipolar Transistors.In Proceedings of 5th International Conference on Vehicle, Mechanical and Electrical Engineering - Volume 1: ICVMEE, ISBN 978-989-758-412-1, pages 398-401. DOI: 10.5220/0008865203980401

in Bibtex Style

@conference{icvmee19,
author={Chuantao Ma},
title={A New Design Method for Emitter Finger Space of Heterojunction Bipolar Transistors},
booktitle={Proceedings of 5th International Conference on Vehicle, Mechanical and Electrical Engineering - Volume 1: ICVMEE,},
year={2019},
pages={398-401},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0008865203980401},
isbn={978-989-758-412-1},
}

in EndNote Style

TY - CONF

JO - Proceedings of 5th International Conference on Vehicle, Mechanical and Electrical Engineering - Volume 1: ICVMEE,
TI - A New Design Method for Emitter Finger Space of Heterojunction Bipolar Transistors
SN - 978-989-758-412-1
AU - Ma C.
PY - 2019
SP - 398
EP - 401
DO - 10.5220/0008865203980401