Real-time Prognosis of Failure of the IGBT in a Conversion Chain

Kokou Langueh, Ghaleb Hoblos, Houcine Chafouk

2020

Abstract

In this paper, the problem of prognosis of failure of Insulated Gate Bipolar Transistors (IBGT) in a DC-DC converter is studied. Indeed, the degradation of IGBT can be caused by several factors (electrical, thermal and mechanical stresses,aging, ...). This degradation can be assessed in relation to the variation of the internal resistance of the IGBT. Likewise, we determined the remaining useful life (RUL) of the IGBT compared to the variation of its internal resistance and the duty cycle of the IGBT control signal, which are both estimated in this paper.

Paper Citation

in Harvard Style

Langueh K., Hoblos G. and Chafouk H. (2020). Real-time Prognosis of Failure of the IGBT in a Conversion Chain.In Proceedings of the 17th International Conference on Informatics in Control, Automation and Robotics - Volume 1: ICINCO, ISBN 978-989-758-442-8, pages 195-200. DOI: 10.5220/0009896201950200

in Bibtex Style

@conference{icinco20,
author={Kokou Langueh and Ghaleb Hoblos and Houcine Chafouk},
title={Real-time Prognosis of Failure of the IGBT in a Conversion Chain},
booktitle={Proceedings of the 17th International Conference on Informatics in Control, Automation and Robotics - Volume 1: ICINCO,},
year={2020},
pages={195-200},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0009896201950200},
isbn={978-989-758-442-8},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 17th International Conference on Informatics in Control, Automation and Robotics - Volume 1: ICINCO,
TI - Real-time Prognosis of Failure of the IGBT in a Conversion Chain
SN - 978-989-758-442-8
AU - Langueh K.
AU - Hoblos G.
AU - Chafouk H.
PY - 2020
SP - 195
EP - 200
DO - 10.5220/0009896201950200