Junction Temperature Measurement in Optically-Controlled Power Mosfet

Sandro Rao, Elisa Mallemace, G. Cocorullo, L. Dehimi, L. Dehimi, Francesco Della Corte

2021

Abstract

The temperature-dependent optical properties of silicon carbide (SiC), such as refractive index and reflectivity, have been used for a direct monitoring of the junction temperature of a power MOSFET. In particular, the optical response of a 4H-SiC MOSFET-integrated Fabry-Perot cavity to temperature changes has been investigated through parametric optical simulations at the wavelength of 450 nm. The reflected optical power exhibited oscillatory patterns caused by the multiple beam interference for which the MOSFET epilayer, between the gate-oxide and the doped 4H-SiC substrate, acts as a Fabry-Perot etalon. These results were used to calculate the refractive index change and, therefore, the optical phase shift of ∆φ= π/2 corresponding to a temperature variation that can be considered as a warning for the device “health”. In practical applications, the periodic monitoring of the optic spectrum at the interferometric structure output gives an essential information about the device operating temperature condition that, for high power operations, may lead to device damages or system failure.

Paper Citation

in Harvard Style

Rao S., Mallemace E., Cocorullo G., Dehimi L. and Della Corte F. (2021). Junction Temperature Measurement in Optically-Controlled Power Mosfet.In Proceedings of the 9th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-492-3, pages 110-114. DOI: 10.5220/0010327001100114

in Bibtex Style

@conference{photoptics21,
author={Sandro Rao and Elisa Mallemace and G. Cocorullo and L. Dehimi and Francesco Della Corte},
title={Junction Temperature Measurement in Optically-Controlled Power Mosfet},
booktitle={Proceedings of the 9th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2021},
pages={110-114},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0010327001100114},
isbn={978-989-758-492-3},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 9th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Junction Temperature Measurement in Optically-Controlled Power Mosfet
SN - 978-989-758-492-3
AU - Rao S.
AU - Mallemace E.
AU - Cocorullo G.
AU - Dehimi L.
AU - Della Corte F.
PY - 2021
SP - 110
EP - 114
DO - 10.5220/0010327001100114