Elastic Stress Relaxation in the AlN/SiC Heterostructures: Modeling by Utilizing the Molecular Dynamics Method

E. A. Panyutin

2022

Abstract

A computer study of crystallographic features of lattices detected near their heterogeneous boundaries was performed within the general direction of research on the AlN/SiC heterostructures considered as a promising platform for functional electronics intended to operate under extreme temperature conditions (including volcano research, geyser monitoring, ultradeep drilling, etc.). Modeling by means of the molecular dynamics method utilizing the Tersoff potentials (for SiC) and the potential proposed by Vashishta (for AlN) allowed researchers to obtain a 3D description of the energy landscape and locations of its characteristic points (minima, saddle points). Minimizing the total crystallite energy as the lattice configuration varies with changes in the distance from the interface makes it possible to directly calculate the characteristic relaxation length in the elastic stress field posing a direct interest for the technology of low-defect nanolayers.

Paper Citation

in Harvard Style

A. Panyutin E. (2022). Elastic Stress Relaxation in the AlN/SiC Heterostructures: Modeling by Utilizing the Molecular Dynamics Method. In Proceedings of the 3rd International Symposium on Water, Ecology and Environment - Volume 1: ISWEE; ISBN 978-989-758-639-2, SciTePress, pages 268-271. DOI: 10.5220/0012008600003536

in Bibtex Style

@conference{iswee22,
author={E. A. Panyutin},
title={Elastic Stress Relaxation in the AlN/SiC Heterostructures: Modeling by Utilizing the Molecular Dynamics Method},
booktitle={Proceedings of the 3rd International Symposium on Water, Ecology and Environment - Volume 1: ISWEE},
year={2022},
pages={268-271},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0012008600003536},
isbn={978-989-758-639-2},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 3rd International Symposium on Water, Ecology and Environment - Volume 1: ISWEE
TI - Elastic Stress Relaxation in the AlN/SiC Heterostructures: Modeling by Utilizing the Molecular Dynamics Method
SN - 978-989-758-639-2
AU - A. Panyutin E.
PY - 2022
SP - 268
EP - 271
DO - 10.5220/0012008600003536
PB - SciTePress