Barrier Structure for Ga-Free Type-II Superlattice Midwave Infrared Photodetector

P. Christol, M. Bouschet, M. Bouschet, J. P. Perez, N. Péré-Laperne

2023

Abstract

This paper reports on electrical and electro-optical characterizations of Ga-free InAs/InAsSb type-II superlattices (T2SL) midwave infrared barrier photodetectors grown by Molecular Beam Epitaxy on GaSb substrate. Experimental measurements are made of photo-response and dark current density-voltage (J-V) measurements performed as a function of temperature and transport of minority carrier in this barrier detector is discussed. Results obtained at 150 K for 5µm cut-off wavelength are at the state of the art but identification of an high bias voltage operation demonstrates that the barrier layer has to be improved.

Paper Citation

in Harvard Style

Christol P., Bouschet M., Perez J. and Péré-Laperne N. (2023). Barrier Structure for Ga-Free Type-II Superlattice Midwave Infrared Photodetector. In Proceedings of the 11th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-632-3, pages 21-27. DOI: 10.5220/0011624500003408

in Bibtex Style

@conference{photoptics23,
author={P. Christol and M. Bouschet and J. P. Perez and N. Péré-Laperne},
title={Barrier Structure for Ga-Free Type-II Superlattice Midwave Infrared Photodetector},
booktitle={Proceedings of the 11th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2023},
pages={21-27},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0011624500003408},
isbn={978-989-758-632-3},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 11th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Barrier Structure for Ga-Free Type-II Superlattice Midwave Infrared Photodetector
SN - 978-989-758-632-3
AU - Christol P.
AU - Bouschet M.
AU - Perez J.
AU - Péré-Laperne N.
PY - 2023
SP - 21
EP - 27
DO - 10.5220/0011624500003408