Increasing Power Output of Quantum Cascade Lasers (QCLs) Added with AlAs/InAs Layers Through Bandgap Engineering

Shigeyuki Takagi, Hirotaka Tanimura, Tsutomu Kakuno, Rei Hashimoto, Kei Kaneko, Shinji Saito

2025

Abstract

We applied bandgap engineering to n-type semiconductor quantum cascade lasers (QCLs) and investigated the effects the following methods to increase the power output of structures reported in the literature. Three types of structure were investigated: (1) the AlAs/InAs structure that promotes the formation of population inversion by promoting electron transport leakage, (2) the structure with a thin barrier layer that enhances electron transport, and (3) the structure with an active region with reduced Al composition that assists in the formation of population inversion. The gains and wavelengths of these structures were calculated using a simulator that uses a nonequilibrium Green's function. The results showed that the AlAs/InAS structure had the highest gain. On the basis of the simulation results, two types of QCL, the reference structure and the AlAs/InAs, structure were fabricated. The peak output of the laser in the AlAs/InAS structure increased 1.73 times, compared with that in the reference structure. The validities of investigating the increase in power output by bandgap engineering and simulating QCL characteristics were demonstrated.

Paper Citation

in Harvard Style

Takagi S., Tanimura H., Kakuno T., Hashimoto R., Kaneko K. and Saito S. (2025). Increasing Power Output of Quantum Cascade Lasers (QCLs) Added with AlAs/InAs Layers Through Bandgap Engineering. In Proceedings of the 13th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS; ISBN 978-989-758-736-8, SciTePress, pages 126-132. DOI: 10.5220/0013255800003902

in Bibtex Style

@conference{photoptics25,
author={Shigeyuki Takagi and Hirotaka Tanimura and Tsutomu Kakuno and Rei Hashimoto and Kei Kaneko and Shinji Saito},
title={Increasing Power Output of Quantum Cascade Lasers (QCLs) Added with AlAs/InAs Layers Through Bandgap Engineering},
booktitle={Proceedings of the 13th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS},
year={2025},
pages={126-132},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0013255800003902},
isbn={978-989-758-736-8},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 13th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS
TI - Increasing Power Output of Quantum Cascade Lasers (QCLs) Added with AlAs/InAs Layers Through Bandgap Engineering
SN - 978-989-758-736-8
AU - Takagi S.
AU - Tanimura H.
AU - Kakuno T.
AU - Hashimoto R.
AU - Kaneko K.
AU - Saito S.
PY - 2025
SP - 126
EP - 132
DO - 10.5220/0013255800003902
PB - SciTePress