DIFFERENTIAL ELECTRIC FIELD SENSITIVE FIELD EFFECT TRANSISTOR - Characteristics, Modeling and Applications

Yehya H. Ghallab, Wael Badawy

2008

Abstract

This paper presents the Differential Electric Field Sensitive Field Effect Transistor (DeFET) as a CMOS electric field sensor. The DeFET is based on a standard 0.18-µm Taiwan Semiconductor Manufacturing Company (TSMC) CMOS technology. This paper also presents the DeFET’s DC and AC models. The experimental and simulation results which validate the different models of the DeFET are presented. Moreover, some applications of the DeFET on the biomedical and lab-on-a-chip are presented.

Paper Citation

in Harvard Style

H. Ghallab Y. and Badawy W. (2008). DIFFERENTIAL ELECTRIC FIELD SENSITIVE FIELD EFFECT TRANSISTOR - Characteristics, Modeling and Applications . In Proceedings of the First International Conference on Biomedical Electronics and Devices - Volume 2: BIODEVICES, (BIOSTEC 2008) ISBN 978-989-8111- 17-3, pages 250-255. DOI: 10.5220/0001046102500255

in Bibtex Style

@conference{biodevices08,
author={Yehya H. Ghallab and Wael Badawy},
title={DIFFERENTIAL ELECTRIC FIELD SENSITIVE FIELD EFFECT TRANSISTOR - Characteristics, Modeling and Applications},
booktitle={Proceedings of the First International Conference on Biomedical Electronics and Devices - Volume 2: BIODEVICES, (BIOSTEC 2008)},
year={2008},
pages={250-255},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0001046102500255},
isbn={978-989-8111- 17-3},
}

in EndNote Style

TY - CONF
JO - Proceedings of the First International Conference on Biomedical Electronics and Devices - Volume 2: BIODEVICES, (BIOSTEC 2008)
TI - DIFFERENTIAL ELECTRIC FIELD SENSITIVE FIELD EFFECT TRANSISTOR - Characteristics, Modeling and Applications
SN - 978-989-8111- 17-3
AU - H. Ghallab Y.
AU - Badawy W.
PY - 2008
SP - 250
EP - 255
DO - 10.5220/0001046102500255