Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping

Kento Okamoto, Toshifumi Kikuchi, Akihiro Ikeda, Hiroshi Ikenoue, Tanemasa Asano

2019

Abstract

Impact of laser doping on the formation of ohmic contacts to 4H-SiC has been investigated. The laser doping was performed by irradiating pulse-width stretched KrF excimer laser to an Al film coated on the surface of 4H-SiC. Doping and contact formation on the carbon face of 4H-SiC were investigated. The doping was carried out while keeping the sample at room temperature. It is found that the laser doping is able to introduce Al up to a concentration as high as 5×1021 cm-3. As a result of heavy doping, the contact made of Ti/Al metallization provides the ohmic contact whose specific contact resistance as low as 4.0×10-6 Ωcm2 without additional heat treatment. The specific contact resistance is lower than that reported for ohmic contacts formed by using ion implantation.

Paper Citation

in Harvard Style

Okamoto K., Kikuchi T., Ikeda A., Ikenoue H. and Asano T. (2019). Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping.In Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS, ISBN 978-989-758-364-3, pages 294-298. DOI: 10.5220/0007583002940298

in Bibtex Style

@conference{photoptics19,
author={Kento Okamoto and Toshifumi Kikuchi and Akihiro Ikeda and Hiroshi Ikenoue and Tanemasa Asano},
title={Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping},
booktitle={Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,},
year={2019},
pages={294-298},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0007583002940298},
isbn={978-989-758-364-3},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 7th International Conference on Photonics, Optics and Laser Technology - Volume 1: PHOTOPTICS,
TI - Formation of Low Resistance Contacts to p-type 4H-SiC using Al-Film Source Laser Doping
SN - 978-989-758-364-3
AU - Okamoto K.
AU - Kikuchi T.
AU - Ikeda A.
AU - Ikenoue H.
AU - Asano T.
PY - 2019
SP - 294
EP - 298
DO - 10.5220/0007583002940298