Characterization on Surface Morphology of GaN Layer Deposited on 2D MoS2 Developed by CVD System

Iwan Susanto, Iwan Susanto, Ing-Song Yu, Chi-Yu Tsai, Yen-Ten Ho, Ping-Yu Tsai, Dianta Mustofa Kamal, Belyamin, Sulaksana Permana

2020

Abstract

A few layers of GaN was deposited epitaxial on the MoS2 layers by PA-MBE technique. A smooth surface with mixed like-flakes of MoS2 is provided by the development of CVD system. It is grown on the c-sapphire substrate with a few layers. Further, surface morphology both of MoS2 substrate and GaN layer was investigated in detail by the AFM and FE-SEM characterization. The results demonstrated that the surface morphology of the constructing GaN layer was smoother than MoS2 layer. The surface texture was obtained throughout the decreasing of area roughness up to 1.44 nm and root mean square (RMS) of 2.40 nm. However, thin GaN layers covering the MoS2 surface was in the less content of atomic with a weight Ga element. It takes longer growth time and more flux to obtain a flat morphological surface with high smoothness.

Paper Citation

in Harvard Style

Susanto I., Yu I., Tsai C., Ho Y., Tsai P., Kamal D., Belyamin. and Permana S. (2020). Characterization on Surface Morphology of GaN Layer Deposited on 2D MoS2 Developed by CVD System. In Proceedings of the 9th Annual Southeast Asian International Seminar - Volume 1: ASAIS, ISBN 978-989-758-518-0, pages 93-96. DOI: 10.5220/0010537900003153

in Bibtex Style

@conference{asais20,
author={Iwan Susanto and Ing-Song Yu and Chi-Yu Tsai and Yen-Ten Ho and Ping-Yu Tsai and Dianta Mustofa Kamal and Belyamin and Sulaksana Permana},
title={Characterization on Surface Morphology of GaN Layer Deposited on 2D MoS2 Developed by CVD System},
booktitle={Proceedings of the 9th Annual Southeast Asian International Seminar - Volume 1: ASAIS,},
year={2020},
pages={93-96},
publisher={SciTePress},
organization={INSTICC},
doi={10.5220/0010537900003153},
isbn={978-989-758-518-0},
}

in EndNote Style

TY - CONF

JO - Proceedings of the 9th Annual Southeast Asian International Seminar - Volume 1: ASAIS,
TI - Characterization on Surface Morphology of GaN Layer Deposited on 2D MoS2 Developed by CVD System
SN - 978-989-758-518-0
AU - Susanto I.
AU - Yu I.
AU - Tsai C.
AU - Ho Y.
AU - Tsai P.
AU - Kamal D.
AU - Belyamin.
AU - Permana S.
PY - 2020
SP - 93
EP - 96
DO - 10.5220/0010537900003153